Composition-dependent properties of MgxZn1−xO films by sputtering

Author

Li, Hui ; Liu, Shibin ; Xie, Erqing

Author_Institution

Sch. of Electron. & Inf., Northwestern Polytech. Univ., Xi´´an, China

fYear

2011

fDate

15-17 July 2011

Firstpage

1111

Lastpage

1114

Abstract

The properties of Mg_xZn_1-xO films dependent on composition were studied in this paper. The experiment showed that the composition of films prepared by sputtering was affected by ambient condition and annealing temperature. The increasing Mg content was in favor of increasing crystal quality of films, and didn´t change the wurtzite structure of films. The band gap changed between 3.4 and 4.0 eV, which was dependent on Mg content in films and consistent well with the previous reported theory on alloyed films. These results above showed that Mg_xZn_1-xO films by sputtering could be used as barrier layers in ZnO-based heterostructures.

Keywords

II-VI semiconductors; annealing; crystal structure; energy gap; manganese compounds; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; Mg content; Mg_xZn_1-xO; ZnO-based heterostructures; annealing temperature; band gap; barrier layers; composition-dependent properties; crystal quality; film composition; sputtering; wurtzite structure; Annealing; Crystals; Films; Lattices; Photonic band gap; Substrates; Zinc oxide; MgxZn1−xO; sputtering; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on

Conference_Location

Hohhot

Print_ISBN

978-1-4244-9436-1

Type

conf

DOI

10.1109/MACE.2011.5987130

Filename

5987130