DocumentCode
2795468
Title
A semistate description for hysteresis in MOS neural-type cells
Author
Wolodkin, G. ; El-Leithy, N. ; de Savigny, M. ; Tsay, S.W. ; Newcomb, R.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1990
fDate
12-14 Aug 1990
Firstpage
289
Abstract
Semistate theory is used to give a new means of viewing the hysteresis developed in an MOS neural-type cell. The current which feeds an RC load is represented in terms of single valued functions within the semistate equations with some node voltages considered as parameters. When these parameters are eliminated, via equations or SPICE simulations, hysteresis is found to be present for certain element value and input voltage choices
Keywords
MOS integrated circuits; digital simulation; hysteresis; neural nets; MOS neural-type cells; RC load; SPICE simulations; element value; hysteresis; input voltage choices; node voltages; semistate description; single valued functions; Circuits; Educational institutions; Feeds; Hysteresis; Intelligent networks; Laboratories; Neural networks; Nonlinear equations; SPICE; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location
Calgary, Alta.
Print_ISBN
0-7803-0081-5
Type
conf
DOI
10.1109/MWSCAS.1990.140709
Filename
140709
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