• DocumentCode
    2795939
  • Title

    Equilibrium between spontaneous polarization, piezoelectric polarization and crystal defects for blue LEDs on sapphire substrate

  • Author

    Wang, Yufu

  • Author_Institution
    Inf. & Control Inst., Weifang Univ., Weifang, China
  • fYear
    2011
  • fDate
    15-17 July 2011
  • Firstpage
    1293
  • Lastpage
    1295
  • Abstract
    High power InGaN-based blue LEDs have been commercialized despite the presence of a high dislocation density in the heteroepitaxial structures. Traditional trial-and-error techniques are very inefficient for improving the process of MOVCD. We analyze the relationship between spontaneous, piezoelectric polarization and crystal defaults by adjusting screening values. The simulation results shows to improve characteristics of blue LEDs on sapphire substrate, interfacial charges for piezoelectric and polarization should get equilibrium with crystal defects. And it may be the real lighting mechanism for InGaN-based blue LEDs with high dislocation density.
  • Keywords
    III-V semiconductors; dislocation density; gallium compounds; indium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; InGaN; MOVCD; blue LED; crystal defaults; crystal defects; dislocation density; heteroepitaxial structures; interfacial charges; sapphire substrate; screening values; spontaneous piezoelectric polarization; spontaneous polarization; trial-and-error techniques; Crystals; Gallium nitride; Light emitting diodes; Silicon; Spontaneous emission; Substrates; MOCVD; crystal fault; piezoelectric polarization; simulation; spontaneous polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
  • Conference_Location
    Hohhot
  • Print_ISBN
    978-1-4244-9436-1
  • Type

    conf

  • DOI
    10.1109/MACE.2011.5987179
  • Filename
    5987179