DocumentCode
2798300
Title
Thermocompression bonding for 3D RF MEMS devices using gold and silver as intermediate layer
Author
Qureshi, A.Q.A. ; Colpo, Sabrina ; Vasilache, D.A. ; Girardi, Stefano ; Conci, P. ; Margesin, Benno
Author_Institution
Fondazione Bruno Kessler, Trento, Italy
Volume
1
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
183
Lastpage
186
Abstract
The paper presents preliminary results on Au-Au and Ag-Ag thermocompression bonding at low temperature. For both materials, sample structures have been prepared and different bonding conditions experimented. Results are compared in order to evaluate Au and Ag bond strength and to establish the optimum parameters. Shear tests were performed to quantify the bond strength and after that SEM was employed to examine the bonded joints. Bond strength of Ag-Ag compare to Au-Au (at 300°C and under the pressure of 0.196 MPa) seems more promising.
Keywords
gold; lead bonding; micromechanical devices; shear strength; silver; 3D RF MEMS devices; Ag; Au; bond strength; bonding conditions; gold; pressure 0.196 MPa; shear tests; silver; temperature 300 C; thermocompression bonding; Bonding; Gold; Joints; Micromechanical devices; Silver; Intermediate layer bonding; Metal to metal bonding; Thermocompression bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400660
Filename
6400660
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