• DocumentCode
    2798575
  • Title

    Electric currents induced by twisted light in bulk semiconductors

  • Author

    Quinteiro, G.F. ; Tamborenea, P.I.

  • Author_Institution
    Dept. de Fis. J. J. Giambiagi, Univ. de Buenos Aires, Ciudad de Buenos Aires, Argentina
  • fYear
    2009
  • fDate
    14-19 June 2009
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    The paper presents an analysis of the interaction of twisted light (TL) with a bulk semiconductor and predict that the light induces, to first order, an electric current having no analog in the motion of atoms subject to TL. Semiconductors are optically excited by promoting the electrons from the valence to the conduction band. The analysis is restricted to optical excitations that couple electron wave-numbers near k = 0, a typical situation in semiconductor optics.
  • Keywords
    OBIC; laser beam effects; semiconductor materials; bulk semiconductors; electric currents; electron wave-numbers; optical excitations; semiconductor optics; twisted light; Atom optics; Current; Electron optics; Ion beams; Laboratories; Laser beams; Laser theory; Optical films; Physics; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-4079-5
  • Electronic_ISBN
    978-1-4244-4080-1
  • Type

    conf

  • DOI
    10.1109/CLEOE-EQEC.2009.5192760
  • Filename
    5192760