DocumentCode
2798787
Title
Practical application of MOSFET synchronous rectifiers
Author
Blanc, James
Author_Institution
Siliconix Inc., Santa Clara, CA, USA
fYear
1991
fDate
5-8 Nov 1991
Firstpage
495
Lastpage
501
Abstract
The application of MOSFET synchronous rectifiers (SRs) to a forward power converter with resonant reset is analyzed. Under the assumptions of ideal gate-drive waveforms, the theoretical minimum losses are determined. The analysis shows that the gate charge and on-resistance of the current generation of power MOSFETs are low enough to yield a significant increase in rectifier efficiency. Two simple gate drive circuits are presented, and the effects of parasitic circuit inductances on the gate voltage waveforms are shown. The measured converter losses for these SR drive circuits are compared to the losses for the Schottky rectifiers, as well as to the theoretical minimum losses. For the 3.3 V output at load currents between 5 and 10 A, the losses approach the theoretical minimum. For higher load currents, the MOSFET body-drain diode causes losses during its reverse recovery, due to the nonideal timing of gate drive voltages
Keywords
insulated gate field effect transistors; power convertors; power transistors; rectifiers; 3.3 V; 5 to 10 A; MOSFET synchronous rectifiers; application; body-drain diode; efficiency; forward power converter; gate charge; gate drive circuits; losses; on-resistance; parasitic circuit inductances; power transistors; resonant reset; Loss measurement; MOSFET circuits; Power MOSFET; Power generation; Rectifiers; Resonance; Schottky diodes; Strontium; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, 1991. INTELEC '91., 13th International
Conference_Location
Kyoto
Print_ISBN
0-87942-670-5
Type
conf
DOI
10.1109/INTLEC.1991.172441
Filename
172441
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