• DocumentCode
    2799050
  • Title

    Investigation of the mirror temperature of narrowstripe GaAs/AlGaAs quantum well lasers with segmented contacts

  • Author

    Hanke, Chr. ; Herrmann, F.U. ; Beeck, S.

  • Author_Institution
    Siemens Research Laboratories, W. Schottky Institute
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    156
  • Lastpage
    157
  • Keywords
    Absorption; Charge carrier density; Contacts; Degradation; Gallium arsenide; Mirrors; Optical pumping; Power lasers; Quantum well lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764470
  • Filename
    764470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2799050