DocumentCode
2799222
Title
Carrier recombination rates in GaAs/AlGaAs and strained InGaAs/GaAs quantum wells under high levels of excitation
Author
Chen, Y.C. ; Waters, R.G. ; Coleman, J.J. ; Bour, D.P. ; Wang, P.
Author_Institution
City University of New York, McDonnell Douglas Electronic Systems, University of Illinois, Sarnoff Research Center
fYear
1990
fDate
9-14 Sept. 1990
Firstpage
182
Lastpage
183
Keywords
Charge carrier density; Charge carrier lifetime; Gallium arsenide; Indium gallium arsenide; Laser excitation; Pulse measurements; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location
Davos, Switzerland
Type
conf
DOI
10.1109/ISLC.1990.764481
Filename
764481
Link To Document