A GaAs non-volatile memory

Author

Harrington, D.L. ; Gee, W.C. ; Fay, J.F. ; Leybovich, I.S. ; Naik, I.K. ; Nicalek, T.P. ; Maderic, B.P. ; Sanchez, L.E. ; Stoddard, M.W. ; Troeger, G.L. ; Watanabe, S.H. ; Wu, S.Y. ; Notthoff, J.K.

Author_Institution

McDonnell Douglas Electron. Syst. Co., Santa Ana, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

75

Lastpage

78

Abstract

A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2 K/4 K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.<>

Keywords

III-V semiconductors; ferroelectric storage; gallium arsenide; integrated memory circuits; 2 kbit; 4 kbit; FERRAM; GaAs; PZT films; PbZrO3TiO3; ferroelectric capacitor memory storage element; ferroelectric random access memory; non-volatile memory; nonvolatile storage; Capacitors; Circuit testing; Dielectric thin films; Ferroelectric materials; Gallium arsenide; Hysteresis; Nonvolatile memory; Polarization; Random access memory; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172637

Filename

172637