Charging and discharging processes in ALN dielectric films deposited by plasma assisted molecular beam epitaxy

Author

Koutsoureli, M. ; Adikimenakis, A. ; Michalas, L. ; Papandreou, E. ; Pantazis, Alexandros ; Konstantinidis, G. ; Georgakilas, A. ; Papaioannou, G.

Author_Institution

Solid State Phys. Sect., Univ. of Athens, Athens, Greece

Volume

2

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

281

Lastpage

284

Abstract

In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal-Insulator-Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current-voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping.

Keywords

III-V semiconductors; aluminium compounds; dielectric depolarisation; dielectric polarisation; hopping conduction; molecular beam epitaxial growth; piezoelectric semiconductors; piezoelectric thin films; piezoelectricity; plasma materials processing; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; AlN; MIM capacitors; charge collection; charging processes; constant current injection; current stress; current-voltage characteristics; depolarization process; dielectric films; discharging processes; hopping conduction; metal-insulator-metal capacitors; plasma-assisted molecular beam epitaxy; polarization build-up; polycrystalline films; temperature 300 K to 400 K; voltage transient monitoring; Dielectrics; Films; Micromechanical devices; Stress; Temperature; Temperature measurement; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400785

Filename

6400785