• DocumentCode
    2800584
  • Title

    Phonon-limited transport in carbon nanotubes using the Monte Carlo method

  • Author

    Pennington, G. ; Akturk, A. ; Goldsman, N.

  • Author_Institution
    Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
  • fYear
    2004
  • fDate
    24-27 Oct. 2004
  • Firstpage
    51
  • Lastpage
    52
  • Abstract
    Carbon nanotubes (CNTs) are at the forefront of current research in nanoelectronics. At the present many questions still exist regarding the transport properties of these materials. The mobility of long (/spl sim/325 /spl mu/m) single-walled carbon nanotubes (SWCNTs) agrees very well with semiclassical transport simulations involving inelastic phonon scattering. Such a transport model is likely to be valid when the tube length is longer than the momentum relaxation length (L/sub m/), but may give insights into the electronic and phonon properties of nanotubes of all lengths. One may investigate the dependence of L/sub m/, or other important transport properties such as the phonon-limited mobility, on the tube diameter, on surrounding fields, and on the temperature. Monte Carlo simulations require models for the electron and phonon energy as a function of wavevector. The wavevector space of a nanotube is discretized into a large number of 1-D zones, each corresponding to a single electron subband or a single phonon subbranch.
  • Keywords
    Monte Carlo methods; carbon nanotubes; electron mobility; electron-phonon interactions; nanoelectronics; semiconductor device models; Monte Carlo method; electron energy; electronic properties; inelastic phonon scattering; momentum relaxation length; nanoelectronics; phonon energy; phonon properties; phonon-limited mobility; phonon-limited transport; semiclassical transport simulations; single electron subband; single phonon subbranch; single-walled carbon nanotubes; surrounding fields; transport model; transport properties; tube diameter; wavevector space; Charge carrier mobility; Electrons; Monte Carlo methods; Phonons; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
  • Conference_Location
    West Lafayette, IN, USA
  • Print_ISBN
    0-7803-8649-3
  • Type

    conf

  • DOI
    10.1109/IWCE.2004.1407316
  • Filename
    1407316