Magnetron reactive ion etching for GaAs IC manufacturing technology

Author

Namaroff, M. ; Sasserath, J. ; Meyyappan, M. ; McLane, G. ; Lee, H.S. ; Cole, M.W.

Author_Institution

Materials Research Corp., Orangeburg, NY, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

297

Lastpage

300

Abstract

A report is presented on the development of magnetron-enhanced reactive ion etching (MIE) processes suitable for GaAs IC manufacturing technology. MIE is attractive for implementation in device fabrication efforts as it provides high etch rates and low residual damage. Processes for via hole etching and other applications, such as gate recess, are reported. Via etching was successfully accomplished with SiCl/sub 4/ and Cl/sub 2/. Control of side wall angle and selectivity was achieved through variation of process pressure. Processes suitable to etch fine device features were examined using two different plasmas, SiCl/sub 4/ and BCl/sub 3/. The residual damage to the wafer was assessed using transmission electron microscopy and Schottky diode characteristics. The damage was found to be extremely low for both etch gases.<>

Keywords

III-V semiconductors; gallium arsenide; integrated circuit manufacture; sputter etching; BCl/sub 3/; Cl/sub 2/; GaAs; IC manufacturing technology; Schottky diode characteristics; SiCl/sub 4/; device fabrication; gate recess; plasmas; reactive ion etching; selectivity; side wall angle control; transmission electron microscopy; via hole etching; wafer damage; Etching; Fabrication; Gallium arsenide; Manufacturing processes; Plasma applications; Plasma devices; Plasma properties; Pressure control; Schottky diodes; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172696

Filename

172696