Electrical properties of lead telluride single crystals doped with Gd

Author

Todosiciuc, A. ; Nicorici, Andrey ; Condrea, E. ; Warchulska, J.

Author_Institution

Inst. of Electron. Eng. & Nanotechnol., Chisinau, Moldova

Volume

2

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

269

Lastpage

272

Abstract

Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.

Keywords

Hall mobility; IV-VI semiconductors; Seebeck effect; carrier density; electrical conductivity; gadolinium; lead compounds; magnetic susceptibility; narrow band gap semiconductors; thermoelectric power; PbTe:Gd; Seebeck coefficient; charge states; electric conductivity; electrical properties; electron transport; free carrier concentration; free carrier mobility; gadolinium-doped lead telluride single crystals; impurity content; magnetic susceptibility; single-crystalline samples; thermoelectric power factor; variable gadolinium valence; Conductivity; Crystals; Impurities; Tellurium; Temperature; Temperature dependence; Temperature measurement; lead telluride single crystals; magnetic susceptibility; narrow-gap semiconductors; rare earths;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400788

Filename

6400788