5-60 GHz high-gain distributed amplifier utilizing InP cascode HEMTs

Author

Yuen, C. ; Pao, Y.C. ; Bechtel, N.G.

Author_Institution

Litton Solid State Div., Santa Clara, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

319

Lastpage

322

Abstract

A high-gain InP MMIC (monolithic microwave integrated circuit) cascode distributed amplifier has been developed which has 12 dB of gain from 5 to 60 GHz with over 20 dB gain control capability and a noise figure of 2.5-4 dB in the Ka-band. Lattice-matched InAlAs-InGaAs cascode HEMTs (high electron mobility transistor) on InP with 0.25 mu m gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimensions of 2.3 by 0.9 mm/sup 2/.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; 0.25 micron; 12 dB; 2.5 to 4 dB; 5 to 60 GHz; InP; Ka-band; MMIC; cascode HEMTs; distributed amplifier; high electron mobility transistor; high-gain; lattice-matched semiconductor; microstrip; monolithic microwave integrated circuit; Distributed amplifiers; Gain control; HEMTs; Indium phosphide; Integrated circuit noise; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172703

Filename

172703