• DocumentCode
    2800789
  • Title

    Modeling of quantum nanomechanics

  • Author

    Jauho, A.-T. ; Novotny, T. ; Donarini, A. ; Flindt, C.

  • Author_Institution
    Dept. of Micro & Nanotechnology, Tech. Univ. of Denmark, Lyngby, Denmark
  • fYear
    2004
  • fDate
    24-27 Oct. 2004
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    Microelectromechanical systems (MEMS) are approaching the nanoscale, which ultimately implies that the mechanical motion needs to be treated quantum mechanically. In recent years our group has developed theoretical methods to analyze the shuttle transition in the quantum regime (Novotny, 2004), focusing not only in the IV-curve, but also considering noise, which is an important diagnostic tool in unraveling the microscopic transport mechanisms. Our theoretical analysis is based on a numerical solution of a generalized master equation (GME) for the density matrix. This equation is obtained by tracing the Liouville equation over the bath degrees of freedom (i.e., the free fermions of the electronic contacts, and the damping of the mechanical degree of freedom due to a bosonic environment).
  • Keywords
    Liouville equation; micromechanical devices; nanoelectronics; quantum theory; semiconductor device models; transport processes; tunnelling; IV-curve; Liouville equation; bath degrees of freedom; density matrix; diagnostic tool; electronic contacts; free fermions; generalized master equation; mechanical motion; microelectromechanical systems; microscopic transport mechanisms; quantum mechanical; quantum nanomechanics; shuttle transition; Microelectromechanical devices; Quantum theory; Semiconductor device modeling; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
  • Conference_Location
    West Lafayette, IN, USA
  • Print_ISBN
    0-7803-8649-3
  • Type

    conf

  • DOI
    10.1109/IWCE.2004.1407327
  • Filename
    1407327