A fast-settling GaAs enhanced frequency synthesizer

Author

Naber, J.F. ; Singh, H.P. ; Sadler, R.A. ; Tanis, W.J. ; Koshar, A. ; Segalla, G.

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

353

Lastpage

356

Abstract

An indirect, phase-locked loop, GaAs enhanced frequency synthesizer with 700-ns settling time has been developed using a 0.4 mu m gate multifunction self-aligned gate (MSAG) process. The two-chip GaAs insertion reduces the size of an existing synthesizer from 90 cubic inches to only 30 cubic inches. The 6.0*5.5*0.9 inch module contains a 400-gate, GaAs programmable divider and a sample and hold (S/H) which improves the settling time 77% and reduces the size 67% over the current state-of-the-art synthesizer. Furthermore, the divider reduces power dissipation by 9.7 W, while the S/H reduces power dissipation by 1.3 W.<>

Keywords

III-V semiconductors; frequency synthesizers; gallium arsenide; monolithic integrated circuits; phase-locked loops; 0.4 micron; 700 ns; GaAs; fast-settling; frequency synthesizer; indirect PLL; multifunction self-aligned gate; phase-locked loop; power dissipation; programmable divider; Counting circuits; Detectors; Frequency conversion; Frequency synthesizers; Gallium arsenide; Phase detection; Phase locked loops; Power dissipation; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172712

Filename

172712