DocumentCode
2800982
Title
A novel 12-24 GHz broadband HBT distributed active balanced mixer
Author
Kobayashi, K.W. ; Tran, L.T. ; Lammert, M. ; Block, T.R. ; Oki, A.K. ; Streit, D.C.
Author_Institution
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fYear
1997
fDate
10-10 June 1997
Firstpage
75
Lastpage
78
Abstract
Here we present a novel HBT distributed active balanced Schottky mixer design that demonstrates octave-band balanced frequency performance in a compact 3/spl times/3.9 mm/sup 2/ MMIC while operating with a reduced LO power of +9 dBm. The MMIC mixer features a unique HBT distributed active balun design which employs a novel HBT active IF center-tap combiner that provides gain and also functions as an active load termination for the distributed LO and RF baluns. High performance vertical Schottky diodes made from the existing HBT epitaxy comprise the active mixer device. The HBT active balanced Schottky mixer achieves 8-12 dB conversion loss over a simultaneously swept 12-24 GHz RF and LO octave input band. An LO-IF isolation /spl ges/20 dB, LO-RF isolation /spl ges/30 dB, and 2-2 spur suppression of 24-30 dBc were also achieved across the band and are attributed to the excellent bipolar threshold and beta matching properties of the high speed 1 /spl mu/m GaAs HBTs (f/sub T/´s=43 GHz). The new HBT distributed active balanced mixer design has potential use in wideband mixer applications such as direct-conversion receivers.
Keywords
MMIC mixers; Schottky diode mixers; baluns; bipolar MMIC; distributed parameter networks; heterojunction bipolar transistors; 1 micron; 12 to 24 GHz; 8 to 12 dB; GaAs; HBT distributed active balanced mixer; MMIC mixer; Schottky mixer design; active IF center-tap combiner; active load termination; broadband balanced mixer; direct-conversion receivers; distributed active balun design; octave-band balanced frequency performance; vertical Schottky diodes; wideband mixer applications; Broadband amplifiers; Distributed amplifiers; FETs; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Molecular beam epitaxial growth; Optical amplifiers; Radio frequency; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location
Denver, CO, USA
Print_ISBN
0-7803-4063-9
Type
conf
DOI
10.1109/RFIC.1997.598745
Filename
598745
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