• DocumentCode
    2800982
  • Title

    A novel 12-24 GHz broadband HBT distributed active balanced mixer

  • Author

    Kobayashi, K.W. ; Tran, L.T. ; Lammert, M. ; Block, T.R. ; Oki, A.K. ; Streit, D.C.

  • Author_Institution
    Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
  • fYear
    1997
  • fDate
    10-10 June 1997
  • Firstpage
    75
  • Lastpage
    78
  • Abstract
    Here we present a novel HBT distributed active balanced Schottky mixer design that demonstrates octave-band balanced frequency performance in a compact 3/spl times/3.9 mm/sup 2/ MMIC while operating with a reduced LO power of +9 dBm. The MMIC mixer features a unique HBT distributed active balun design which employs a novel HBT active IF center-tap combiner that provides gain and also functions as an active load termination for the distributed LO and RF baluns. High performance vertical Schottky diodes made from the existing HBT epitaxy comprise the active mixer device. The HBT active balanced Schottky mixer achieves 8-12 dB conversion loss over a simultaneously swept 12-24 GHz RF and LO octave input band. An LO-IF isolation /spl ges/20 dB, LO-RF isolation /spl ges/30 dB, and 2-2 spur suppression of 24-30 dBc were also achieved across the band and are attributed to the excellent bipolar threshold and beta matching properties of the high speed 1 /spl mu/m GaAs HBTs (f/sub T/´s=43 GHz). The new HBT distributed active balanced mixer design has potential use in wideband mixer applications such as direct-conversion receivers.
  • Keywords
    MMIC mixers; Schottky diode mixers; baluns; bipolar MMIC; distributed parameter networks; heterojunction bipolar transistors; 1 micron; 12 to 24 GHz; 8 to 12 dB; GaAs; HBT distributed active balanced mixer; MMIC mixer; Schottky mixer design; active IF center-tap combiner; active load termination; broadband balanced mixer; direct-conversion receivers; distributed active balun design; octave-band balanced frequency performance; vertical Schottky diodes; wideband mixer applications; Broadband amplifiers; Distributed amplifiers; FETs; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Molecular beam epitaxial growth; Optical amplifiers; Radio frequency; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
  • Conference_Location
    Denver, CO, USA
  • Print_ISBN
    0-7803-4063-9
  • Type

    conf

  • DOI
    10.1109/RFIC.1997.598745
  • Filename
    598745