• DocumentCode
    2801584
  • Title

    Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions

  • Author

    Rodríguez, A. Luque ; Tejada, J. A Jiménez ; Rodríguez-Bolivar, S. ; González, M. Bargallo ; Eneman, G. ; Claeys, C. ; Simoen, E.

  • Author_Institution
    Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    384
  • Lastpage
    387
  • Abstract
    A study of the leakage current in strained p+n Si1-xGex/Si hetero-junctions is presented. The reduction in the band gap, induced by stress forces, and the doping level at the hetero-interface, due to the use of halo implantations, are varied by changing the recess depth. A comparison between simulation results and experimental data is presented to analyze the validity of the models used in this work.
  • Keywords
    leakage currents; semiconductor junctions; SiGe; band gap; doping level; electric field; embedded SiGe source/drain junctions; halo implantation; hetero-interface; leakage current; modeling impact; recess depth; strain; stress forces; Electric fields; Junctions; Leakage current; Silicon; Silicon germanium; Stress; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
  • Conference_Location
    Sevilla
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-6658-0
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2010.5618203
  • Filename
    5618203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2801584