Steep-slope nanowire FET with a superlattice in the source extension

In this work we present an investigation on a novel device concept meant to achieve a steep subthreshold slope by filtering out high-energy electrons entering the device channel. The filtering function is entrusted to a superlattice in the source extension region, which could possibly be fabricated by deposition of a number of appropriate semiconductor layers within a manufacturing process of vertical nanowires. Simulation results indicate that an SS = 26 mV/dec can be achieved using GaAs/AlGaAs as the constituent materials of the superlattice.