Experimental comparison of programming mechanisms in 1T-DRAM cells with variable channel length

Author

Hubert, Alexandre ; Bawedin, Maryline ; Guegan, Georges ; Cristoloveanu, Sorin ; Ernst, Thomas ; Faynot, Olivier

Author_Institution

LETI, CEA, Grenoble, France

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

150

Lastpage

153

Abstract

The bulk DRAM scaling requirements have lead to many different concepts of capacitor-less single-transistor (1T) DRAM. Amongst the various effects used to program the cell, this study is focused on the Impact Ionization (II), the most common mechanism to store charges in the body of the cell, and the Meta-Stable Dip (MSD) effect. Dynamic measurements are presented showing the impact of the gate length reduction on both the II and the MSD programming mechanisms. It is found that MSD is less impacted by the scaling of standard SOI MOSFETs without specific optimization. Those attractive performances result from the dynamic coupling between the front and back gates in Fully Depleted SOI (FDSOI) transistors.

Keywords

DRAM chips; MOSFET; silicon-on-insulator; 1T-DRAM cells; MSD programming mechanisms; capacitor-less single-transistor DRAM; dynamic measurements; fully depleted SOI transistors; gate length reduction; impact ionization; metastable dip effect; standard SOI MOSFET; variable channel length; Couplings; Impact ionization; Junctions; Logic gates; Programming; Random access memory; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618427

Filename

5618427