• DocumentCode
    2807122
  • Title

    Power supply noise modeling and correlation for a 3.2 GHz bidirectional differential memory bus

  • Author

    Schmitt, Ralf ; Yuan, Chuck

  • Author_Institution
    Rambus Inc., Los Altos, CA, USA
  • fYear
    2004
  • fDate
    25-27 Oct. 2004
  • Firstpage
    225
  • Lastpage
    228
  • Abstract
    This work describes the modeling of power supply noise in a high-bandwidth XDR™ DRAM memory system and the correlation with measurement results in time domain while the system is operating. A supply network model is presented that allows prediction of worst-case supply noise outside as well as inside the device packages. Comparison of simulation results with measurements outside the package show excellent correlation, verifying the modeling approach.
  • Keywords
    DRAM chips; correlation theory; distribution networks; electric noise measurement; electronics packaging; system buses; 3.2 GHz; bidirectional differential memory bus; correlation theory; device packages; high bandwidth XDR DRAM memory system; power supply network model; power supply noise modeling; worst case supply noise; Capacitors; Circuit noise; Driver circuits; Frequency; Impedance; Inductance; Packaging; Power supplies; Power system modeling; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging, 2004. IEEE 13th Topical Meeting on
  • Print_ISBN
    0-7803-8667-1
  • Type

    conf

  • DOI
    10.1109/EPEP.2004.1407593
  • Filename
    1407593