DocumentCode
2807122
Title
Power supply noise modeling and correlation for a 3.2 GHz bidirectional differential memory bus
Author
Schmitt, Ralf ; Yuan, Chuck
Author_Institution
Rambus Inc., Los Altos, CA, USA
fYear
2004
fDate
25-27 Oct. 2004
Firstpage
225
Lastpage
228
Abstract
This work describes the modeling of power supply noise in a high-bandwidth XDR™ DRAM memory system and the correlation with measurement results in time domain while the system is operating. A supply network model is presented that allows prediction of worst-case supply noise outside as well as inside the device packages. Comparison of simulation results with measurements outside the package show excellent correlation, verifying the modeling approach.
Keywords
DRAM chips; correlation theory; distribution networks; electric noise measurement; electronics packaging; system buses; 3.2 GHz; bidirectional differential memory bus; correlation theory; device packages; high bandwidth XDR DRAM memory system; power supply network model; power supply noise modeling; worst case supply noise; Capacitors; Circuit noise; Driver circuits; Frequency; Impedance; Inductance; Packaging; Power supplies; Power system modeling; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 2004. IEEE 13th Topical Meeting on
Print_ISBN
0-7803-8667-1
Type
conf
DOI
10.1109/EPEP.2004.1407593
Filename
1407593
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