DocumentCode
2807251
Title
Optimization of high Q CMOS-compatible microwave inductors using silicon CMOS technology
Author
Min Park ; Seonghearn Lee ; Hyun Kyu Yu ; Kee Soo Nam
Author_Institution
Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear
1997
fDate
10-10 June 1997
Firstpage
181
Lastpage
184
Abstract
We present the extensive experimental results showing the important dependences of layout parameters on RF performance of rectangular spiral inductors, in order to determine the optimized layout parameters for designing the high Q inductors used in RF ICs at 2 GHz. The detailed comparative analysis is also carried out to investigate substrate effects by varying the substrate resistivity.
Keywords
CMOS integrated circuits; Q-factor; circuit layout CAD; elemental semiconductors; field effect MMIC; inductors; silicon; 2 GHz; CMOS technology; CMOS-compatible microwave inductors; RF performance; Si; high Q inductors; optimized layout parameters; rectangular spiral inductors; substrate effects; substrate resistivity; CMOS technology; Conductivity; Consumer electronics; Design optimization; Inductors; Microwave technology; Radio frequency; Silicon; Spirals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location
Denver, CO, USA
Print_ISBN
0-7803-4063-9
Type
conf
DOI
10.1109/RFIC.1997.598777
Filename
598777
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