Electric driving requirements of large CMOS CCD array based on a 3-phase CCD cell by SOI LDMOS

In order to obtain the electric driven requirements of large CMOS CCD array based on a 3-phase OPG structure of CCD cell, process and device simulations of the 3-phase OPG structure of CCD cell in 0.5μm SOI CMOS technology were carried out with Silvaco TCAD - one of the authoritative semiconductor process and device simulators. Then the theory on charge and discharge of resistor-capacitor net was adopted to model the circuit architecture of the 3-phase OPG CCD cell based on the obtained process and device simulation results. After that, the electric driven requirements of large 3-phase OPG CMOS CCD array were deduced, based on which the electric driven requirements of large 3-phase OPG CMOS CCD array were outlined by SOI LDMOS.