Time domain signal analysis method applied to high signal level microwave detector circuit

Author

Wolski, Mark R. ; Ishii, T. Koryu

Author_Institution

Dept. of Electr. & Comput. Eng., Marquette Univ., Milwaukee, WI, USA

fYear

1990

fDate

12-14 Aug 1990

Firstpage

597

Abstract

The relationship between microwave power absorbed by a detector diode and the resulting detected voltage at high signal level is investigated. Experimental data is obtained from a zero biased diode mounted in a rectangular waveguide system operating at 9.5 GHz. The Alpa Industries Inc. 4561, 6724 and 6725 Schottky diodes and the MA-COM 1N23 point contact diode with 1 kΩ and 106 kΩ loads are examined. The P-V relationships are analyzed by solving a system of nonlinear differential equations based on a lumped parameter model of the microwave system and diode

Keywords

Schottky-barrier diodes; detector circuits; equivalent circuits; microwave detectors; nonlinear differential equations; nonlinear network analysis; semiconductor device models; time-domain analysis; 1 kohm; 106 kohm; 9.5 GHz; P-V relationships; Schottky diodes; detected voltage; detector diode; high signal level microwave detector circuit; lumped parameter model; microwave power absorbed; point contact diode; power voltage relationship; rectangular waveguide system; time domain signal analysis; zero biased diode; Capacitance; Detectors; Microwave circuits; Microwave theory and techniques; Nonlinear equations; Schottky diodes; Signal analysis; Signal detection; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on

Conference_Location

Calgary, Alta.

Print_ISBN

0-7803-0081-5

Type

conf

DOI

10.1109/MWSCAS.1990.140789

Filename

140789