DocumentCode
2809938
Title
Nonquasi-static modeling technique for microwave GaAs FETs
Author
Lin, H.-K. ; Abdel-motaleb, Ibrahim M.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fYear
1990
fDate
12-14 Aug 1990
Firstpage
621
Abstract
A technique to develop nonquasi-static models for GaAs FETs is developed. In this technique, the active distributed transmission line analogy is used to obtain frequency dependent Y-parameter relationships. Implementing the Y-parameters using R, L and C elements, a small signal equivalent circuits can be built
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; junction gate field effect transistors; semiconductor device models; solid-state microwave devices; FETs; GaAs; JFET; MESFET; active distributed transmission line analogy; frequency dependent Y-parameter relationships; nonquasi-static models; semiconductors; small signal equivalent circuits; Delay effects; Equivalent circuits; Gallium arsenide; JFETs; MESFETs; Microwave FETs; Microwave theory and techniques; Semiconductor device modeling; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location
Calgary, Alta.
Print_ISBN
0-7803-0081-5
Type
conf
DOI
10.1109/MWSCAS.1990.140795
Filename
140795
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