• DocumentCode
    2811729
  • Title

    Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection

  • Author

    Kjebon, O. ; Öhlander, U. ; Lourdudoss, S. ; Wallin, J. ; Streubel, K. ; Nilsson, S. ; Klinga, T.

  • Author_Institution
    Dept. of Electron., R. Inst. of Technol., Kista, Sweden
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    221
  • Lastpage
    222
  • Abstract
    Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA1/2 and high maximum bandwidth, 21.7 GHz, have been fabricated
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.55 mum; 21.7 GHz; 3.4 mA; GaInAsP; GaInAsP DFB buried heterostructure lasers; above threshold current; high maximum bandwidth; high resonance frequency; low current injection; low threshold current; multi quantum well DFB lasers; resonance frequency; square root; Bandwidth; Epitaxial growth; Indium phosphide; Laser modes; Masers; Quantum cascade lasers; Quantum well lasers; Resonance; Resonant frequency; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519343
  • Filename
    519343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2811729