A 0.18μm SOI BCD technology for automotive application

Author

Hao, Y. ; Sim, P.C. ; Toner, B. ; Frank, M. ; Ackermann, M. ; Tan, A. ; Kuniss, U. ; Kho, E. ; Doblaski, J. ; Hee, E.G. ; Liew, M. ; Hoelke, A. ; Wada, S. ; Oshima, T.

Author_Institution

X-FAB, Kuching, Malaysia

fYear

2015

fDate

10-14 May 2015

Firstpage

177

Lastpage

180

Abstract

This paper presents a new SOI BCD technology at the 0.18μm node to fulfill the requirements for smart power IC technology targeted for automotive application. Built on a 1.8V and 5.0V CMOS core, there are 40V and 60V rated N/Pch MOS, with 25mΩ.mm² RonA/57V BVdss having been achieved for the 40V NMOS with excellent process stability. Depletion NMOS, LV&HV diodes, 5V zener diode, high gain BJT, excellent matching well resistor, capacitors, top thick Copper Metallization option, embedded memory (OTP, CEEPROM, etc.) are also offered on this comprehensive technology platform.

Keywords

CMOS integrated circuits; automotive electrics; power integrated circuits; silicon-on-insulator; CMOS core; HV diodes; LV diodes; SOI BCD technology; automotive application; depletion NMOS; embedded memory; excellent matching well resistor; high gain BJT; size 0.18 mum; smart power IC technology; top thick copper metallization option; voltage 1.8 V; voltage 5 V; zener diode; Automotive applications; Electrostatic discharges; Implants; MOSFET; Performance evaluation; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123418

Filename

7123418