Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted Unibond and SIMOX MOSFETs

Author

Renn, S.H. ; Raynaud, C. ; Pelloie, J.L. ; Balestra, F.

Author_Institution

CNRS, Grenoble, France

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

203

Lastpage

208

Abstract

A thorough investigation on hot-carrier effects in deep submicron N- and P-channel SOI MOSFETs is reported in this paper. The following studies are presented in order to thoroughly assess the reliability of SOI technologies: (i) comparison of hot-carrier effects in SIMOX and Unibond MOSFETs; (ii) evaluation of the hot-carrier immunity of fully and partially depleted devices; (iii) analysis of the degradation in N- and P-channel transistors; and (iv) investigation of the aging/recovery mechanisms.

Keywords

MOSFET; SIMOX; ageing; hot carriers; semiconductor device reliability; semiconductor device testing; silicon-on-insulator; wafer bonding; N-channel SOI MOSFETs; N-channel transistors; P-channel SOI MOSFETs; P-channel transistors; SIMOX MOSFETs; SOI MOSFETs; SOI technology; Si-SiO/sub 2/; Unibond MOSFETs; aging mechanism; fully-depleted SOI MOSFETs; hot-carrier degradation; hot-carrier effects; hot-carrier immunity; partially-depleted SOI MOSFETs; recovery mechanism; reliability; Degradation; Hot carrier effects; Hot carriers; Low voltage; MOS devices; MOSFETs; Stress; Threshold voltage; Ultra large scale integration; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670545

Filename

670545