Microfabrication manufacturable vacuum triodes

Author

Sadwick, L. ; Hwu, J. ; Chern, J.H. ; Hofeling, K. ; Ren, J. ; Wu, D. ; Chen, Bob H Y

Author_Institution

InnoSys Inc., Salt Lake City, UT, USA

fYear

2003

fDate

28-30 May 2003

Firstpage

366

Lastpage

367

Abstract

The development effort of a microfabrication manufacturable vacuum triodes for base station power amplifier application. This work is based on InnoSys proprietary solid state vacuum device (SSVD) technology to enable conventional vacuum tubes to have IC form factors, to be low-cost, and to utilize microelectronic design, microfabrication, and manufacturing technologies. Emission properties, current-voltage curves, linearity performance of microfabricated vacuum triodes are studied by finite element and finite difference time domain methods.

Keywords

MIS devices; finite difference time-domain analysis; finite element analysis; power amplifiers; semiconductor device models; triodes; vacuum microelectronics; IC form factors; base station power amplifier; current-voltage curves; emission properties; finite difference time domain methods; finite element analysis; linearity performance; microelectronic design; microfabrication manufacturable vacuum triodes; solid state vacuum device; vacuum tubes; Base stations; Electron tubes; Finite difference methods; Finite element methods; Linearity; Manufacturing; Microelectronics; Power amplifiers; Solid state circuits; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics, 2003 4th IEEE International Conference on

Print_ISBN

0-7803-7699-4

Type

conf

DOI

10.1109/IVEC.2003.1286398

Filename

1286398