Ultra fast electro-optical distributed Bragg reflector laser for optical switching

Author

Delorme, F. ; Rose, B. ; Ramdane, A. ; Pierre, B. ; Nakajima, H.

Author_Institution

France Telecom-CNE, Bagneux, France

fYear

1994

fDate

19-23 Sep 1994

Firstpage

225

Lastpage

226

Abstract

Summary form only given. We realised a InGaAs QW DBR laser with an electro-optical Bragg section using voltage to tune the wavelength. The tuning range is 25 Å for a 5 V drive voltage. And we measured on this device, the best switching time between the different accessible wavelength channels, ever reported on DBR laser: 600 ps, independently of the wavelength shift. These results demonstrate the capability of the EO-DBR laser for ultra-high fast optical switching operation

Keywords

III-V semiconductors; distributed Bragg reflector lasers; electro-optical switches; gallium arsenide; high-speed optical techniques; indium compounds; laser tuning; quantum well lasers; 5 V; 600 ps; DBR laser; EO-DBR laser; InGaAs; InGaAs QW DBR laser; accessible wavelength channels; drive voltage; electro-optical Bragg section; optical switching; switching time; tuning range; ultra fast electro-optical distributed Bragg reflector laser; ultra-high fast optical switching operation; voltage tuned laser wavelength; wavelength shift; Distributed Bragg reflectors; Epitaxial growth; High speed optical techniques; Laser tuning; Lasers and electrooptics; Optical transmitters; Optical waveguides; Tunable circuits and devices; Voltage; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519345

Filename

519345