An optoelectronic switch

Author

Guo, Der-Feng ; Liu, Wen-Chau ; Tsai, Jung-Hui

Author_Institution

Dept. of Electron. Eng., Air Force Acad., Kangshan, Taiwan

fYear

2009

fDate

28-30 April 2009

Firstpage

395

Lastpage

396

Abstract

A GaAs-InGaAs optoelectronic switch, grown by molecular beam epitaxy (MBE), has been fabricated. Owing to the avalanche multiplication and hole accumulation in the transport mechanism, bistable states, i.e., a high-impedance OFF state and a low-impedance ON state, are observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the I-V characteristics on illumination is attributed to the photogenerated hole accumulation in the device operation.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical fabrication; optical switches; GaAs-InGaAs; avalanche multiplication; hole accumulation; molecular beam epitaxy; optoelectronic switch; potential barrier height; Lighting control; Molecular beam epitaxial growth; Optical bistability; Optical control; Optical devices; Optical sensors; Optical switches; Photonic integrated circuits; Switching circuits; Voltage; bistable; optoelectronic; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference, 2009. IVEC '09. IEEE International

Conference_Location

Rome

Print_ISBN

978-1-4244-3500-5

Electronic_ISBN

978-1-4244-3501-2

Type

conf

DOI

10.1109/IVELEC.2009.5193576

Filename

5193576