Incomplete mode-locking in one-section QD lasers with ultra-long cavity

Author

Lin, Gray ; Cheng, Hsu-Chieh ; Kun-Feng Lin ; Xuan, Rong ; Lee, Chien-Peng

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

Semiconductor light emitters based on quantum dot (QD) have recently been used in the fabrication of mode-locked lasers owing to their broad gain spectrum as well as fast carrier dynamics. For GaAs-based InAs QD lasers at 1.3 mum range, mode-locking behaviours of two-section devices with cavity length between 800 and 8000 mum, corresponding to round-trip frequency between 5 and 50 GHz, were investigated to show transform-limited pulses with low uncorrelated timing jitter. While for InP-based InAs QD lasers at 1.5 mum range, self- mode-locking in one-section configuration without saturable absorption was reported to show repetition rate as high as 45 and 134 GHz, corresponding to cavity length of 950 and 340 mum, respectively.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; microcavity lasers; quantum dot lasers; GaAs-InAs; incomplete mode locking; mode locked lasers; quantum dot laser; self mode locking; semiconductor light emitter; size 800 mum to 8000 mum; transform limited pulse; ultralong cavity laser; uncorrelated timing jitter; wavelength 1.3 mum; Absorption; Frequency; Laser mode locking; Light emitting diodes; Optical device fabrication; Optical pulses; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Timing jitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5193612

Filename

5193612