Design and application of GaAs MESFET current mirror circuits

It is well known that the techniques and approaches of circuit design are heavily influenced by the fabrication technology involved. High speed Gallium Arsenide (GaAs) technology is generally regarded as a challenge for circuit designers, principally on account of the lack of a P-channel device, low device gain and, in general, limitation to depletion mode devices. In this paper, the authors show that, unlike bipolar technology, GaAs technology using metal semiconductor FETs (MESFETs) permits the design of a simple fast circuit for the negative current mirror, which has a beneficial effect across a wide range of circuit applications