Compound semiconductor integrated circuits programmes in Europe

Author

Turner, J.A.

Author_Institution

Plessey Res. Caswell Ltd., Towcester, UK

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

3

Lastpage

6

Abstract

Within Europe, collaborative nonmilitary compound semiconductor projects have developed a technological base that is already being used in the large-scale manufacture of GaAs-based products. The author describes these programs and gives examples highlighting the specific achievements of European industry. Current European Economic Community supported microwave programs, as well as national programs of other European countries, are listed. The programs include advanced packaging concepts, large-scale materials growth, advanced device MMICs, and MESFET, HEMT and HBT circuit fabrication.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; packaging; semiconductor growth; Europe; European Economic Community; European industry; GaAs; HBT circuit fabrication; HEMT; MESFET; MMICs; integrated circuits programmes; large-scale manufacture; large-scale materials growth; microwave programs; national programs; nonmilitary compound semiconductor projects; packaging concepts; semiconductors; technological base; Collaboration; Europe; Integrated circuit technology; Large-scale systems; MESFET circuits; MMICs; Manufacturing industries; Microwave devices; Packaging; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175432

Filename

175432