A multifunctional HBT technology

Author

Ho, W.J. ; Chang, M.F. ; Sheng, N.H. ; Wang, N.L. ; Asbeck, P.M. ; Wang, K.C. ; Nubling, R.B. ; Sullivan, G.J. ; Higgins, J.A.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

67

Lastpage

70

Abstract

A self-aligned AlGaAs/GaAs HBT technology has been developed for the fabrication of both high-performance microwave circuits and high-performance digital circuits. The technology provides transistors with high f/sub max/ (up to 218 GHz), high f/sub t/ (up to 98 GHz), and high efficiency (power added efficiency higher than 67.8% at 10 GHz) microwave amplification to at least 20 GHz. A MMIC amplifier has demonstrated 7-dB gain between 14 and 24 GHz. Excellent performance of high-speed digital circuits, such as ring oscillators, frequency dividers, MUXs, DEMUXs, and phase detectors has also been achieved on the same wafer. A multifunction chip covering the entire microwave band is feasible. The technology requirements and self-aligned AlGaAs/GaAs HBT process for multifunction chip application are described. The performances of HBTs, MMIC, and high-speed digital circuits fabricated on the same wafer are reported.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; application specific integrated circuits; bipolar integrated circuits; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; microwave amplifiers; oscillators; phase measurement; 14 to 24 GHz; 218 GHz; 67.8 percent; 7 dB; 98 GHz; AlGaAs-GaAs; DEMUXs; MMIC amplifier; MUXs; digital circuits; fabrication; frequency dividers; microwave amplification; microwave circuits; mixed-mode ICs; multifunction chip; multifunctional HBT technology; phase detectors; power added efficiency; ring oscillators; self-aligned AlGaAs/GaAs HBT technology; semiconductors; technology requirements; Digital circuits; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave circuits; Microwave technology; Microwave transistors; Ring oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175450

Filename

175450