DocumentCode
281611
Title
Power switches for automotive ignition
Author
Melito, M.
Author_Institution
SGS-Thomson Microelectronics, Turin, Italy
fYear
1989
fDate
32574
Firstpage
42552
Lastpage
42554
Abstract
IGBTs are a new class of high voltage insulated gate bipolar power semiconductors that combine the advantages of MOS gate drive simplicity with the current handling capability of bipolar devices. A brief explanation of the physics and the structure of the device is given and the characteristics which make IGBTs the best choice for automotive ignition power switches are pointed out
Keywords
automotive electronics; bipolar transistors; electric ignition; insulated gate field effect transistors; power transistors; semiconductor switches; IGBTs; MOS gate drive; automotive ignition; current handling capability; high voltage; ignition power switches; insulated gate bipolar transistors; power semiconductors;
fLanguage
English
Publisher
iet
Conference_Titel
Power Integrated Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
197981
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