• DocumentCode
    2816138
  • Title

    A pipelined 650 MHz GaAs 8 K ROM with translation logic

  • Author

    Chun, J. ; Enam, S. ; Kang, D. ; Remund, B.

  • Author_Institution
    GigaBit Logic, Newbury Park, CA, USA
  • fYear
    1990
  • fDate
    7-10 Oct. 1990
  • Firstpage
    139
  • Lastpage
    142
  • Abstract
    The first commercially available GaAs 8 K ROM has been designed and manufactured using GigaBit Logic´s 3-level metal E/D (enhancement/depletion) MESFET process. The worst-case clock frequency of 650 MHz has been obtained with a power dissipation of 3.5 W. The ROM is organized as 1 K*8 bits, and on-chip translation logic enables the ROM to have an effective 4 K*8 resolution when used as a sine look-up table. The ECL-compatible ROM is packaged in a standard 40-pin package. The pipeline architecture with a delayed internal clock scheme provides fast operation with maximum data valid time at the output of the ROM. The E/D MESFET process, architecture, circuit design, and test results are outlined.<>
  • Keywords
    III-V semiconductors; gallium arsenide; integrated memory circuits; pipeline processing; read-only storage; 650 MHz; GaAs; ROM; data valid time; delayed internal clock scheme; metal E/D MESFET process; on-chip translation logic; pipeline architecture; power dissipation; sine look-up table; translation logic; worst-case clock frequency; Circuit testing; Clocks; Frequency; Gallium arsenide; Logic design; MESFETs; Manufacturing processes; Packaging; Power dissipation; Read only memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
  • Conference_Location
    New Orleans, LA, USA
  • Type

    conf

  • DOI
    10.1109/GAAS.1990.175470
  • Filename
    175470