44 GHz monolithic HEMT downconverter

Author

Berenz, J. ; LaCon, M. ; Aust, M.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

189

Lastpage

192

Abstract

A systematic design, fabrication, and evaluation of a monolithic HEMT (high-electron-mobility transistor) downconverter is presented. The downconverter contains a three-stage low-noise amplifier (LNA), a single balanced mixer, and a two-stage post-amplifier (IF amplifier). The measured results show the downconverter receives signals from 43.5 to 45.5 GHz and converts them down in frequency from 2.3 to 4.3 GHz. The conversion gain is 15 dB with a noise figure of 6.0 dB. This is the best result reported for down converters in this frequency range, and represents the state of the art in monolithic millimeter-wave technology. The downconverter is a key component for many satellite, phased array radar, and electronic warfare (EW) systems.<>

Keywords

MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; 15 dB; 43.5 to 45.5 GHz; 6.0 dB; conversion gain; electronic warfare; monolithic HEMT downconverter; monolithic millimeter-wave technology; phased array radar; satellite systems; single balanced mixer; three-stage low-noise amplifier; two-stage post-amplifier; Fabrication; Frequency conversion; Frequency measurement; Gain; HEMTs; Low-noise amplifiers; MODFETs; Mixers; Noise figure; Phased arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175483

Filename

175483