DocumentCode
2817589
Title
Characterization of SOI Lamé-mode square resonators
Author
Khine, Lynn ; Palaniapan, Moorthi ; Shao, Lichun ; Wong, Wai-Kin
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2008
fDate
19-21 May 2008
Firstpage
625
Lastpage
628
Abstract
Characterization of Lame-mode square resonators with different straight-beam anchor lengths, structural layer thickness, and number of anchor support reveals that there is likely an optimal range of anchor designs that provide high quality factor (Q) above one million, along with low motional resistance. Shorter anchor length restricts resonator vibrations and motional resistance could be increased by 3.5 times compared to resonators with longer anchor length. Two-anchor support design is able to achieve higher Qpsilas but results in higher motional resistance compared to four-anchor support. When structural thickness is reduced from 25 mum to 10 mum, Q gets degraded but still maintained above one million.
Keywords
Q-factor; frequency measurement; micromechanical resonators; resonance; silicon-on-insulator; vibrations; Lame-mode resonance frequency measurement; SOI Lame-mode square resonators characterization; Si-SiO2; high quality factor; low motional resistance; micromechanical resonators; resonator fabrication process; resonator vibrations; size 10 mum; square resonator design; straight-beam anchor lengths; structural layer thickness effect; Damping; Degradation; Design optimization; Electrical resistance measurement; Micromechanical devices; Q factor; Q measurement; Resonant frequency; Resonator filters; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 2008 IEEE International
Conference_Location
Honolulu, HI
ISSN
1075-6787
Print_ISBN
978-1-4244-1794-0
Electronic_ISBN
1075-6787
Type
conf
DOI
10.1109/FREQ.2008.4623075
Filename
4623075
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