• DocumentCode
    2817623
  • Title

    Total Dose and Single Event Testing of a Hardened Point of Load Regulator

  • Author

    van Vonno, N.W. ; Pearce, L.G. ; Gill, J.S. ; Satterfield, H.W. ; Thomson, E.T. ; Fobes, T.E. ; Williams, A.P. ; Chesley, P.J.

  • Author_Institution
    Intersil Corp., Melbourne, FL, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    8
  • Lastpage
    8
  • Abstract
    We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.
  • Keywords
    BiCMOS integrated circuits; load regulation; power MOSFET; voltage regulators; ISL70001SRH hardened point of load; dose event testing; integrated power MOSFET switching transistors; load regulator; single event testing; single-event effects testing; submicron BiCMOS process; voltage regulator; Ions; Logic gates; Power MOSFET; Radiation effects; Testing; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619501
  • Filename
    5619501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817623