DocumentCode
2817629
Title
Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe
Author
Yi-Ming Sheu ; Huang, Tsung-Yi ; Hu, Yu-Ping ; Wang, Chih-Chiang ; Liu, Sally ; Duffy, Ray ; Heringa, Anco ; Roozeboom, Fred ; Cowern, Nick E.B. ; Griffin, Peter B.
Author_Institution
TCAD project, Device Engineering Division, R&D, Taiwan Semiconductor Manufacturing Company, No.9, Creation Rd. 1, Science-Based Industrial Park, Hsin-Chu, Taiwan, 300-77, R.O.C. (ymsheu@tsmc.com)
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
75
Lastpage
78
Abstract
Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.
Keywords
Annealing; Boron; CMOS technology; Capacitive sensors; Equations; Germanium silicon alloys; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201476
Filename
1562028
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