Effect of phosphine plasma on suppression of plasma-induced defects in InGaAs

Author

Sugino, Takashi ; Miyazaki, Takashi ; Matsuda, Koichiro ; Shirafuji, Junji

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

171

Lastpage

174

Abstract

Electron traps at and near the surface of InGaAs treated with Ar plasma are investigated by isothermal capacitance transient spectroscopy measurements. Two electron traps are detected and designated as E1 and E2. The E1 and E2 traps are located at 0.35 eV and 0.48 eV below the conduction band edge, respectively. In the case when InGaAs is treated with PH₃-added Ar plasma, a significant reduction in the densities of both E1 and E2 traps occurs in comparison with those of Ar-plasma-treated InGaAs. It is found that phosphorus atoms are effective in suppressing generation of electron traps in InGaAs

Keywords

III-V semiconductors; deep level transient spectroscopy; electron traps; gallium arsenide; indium compounds; plasma materials processing; surface states; surface treatment; Ar-PH₃; E1 traps; E2 traps; InGaAs; PH₃; PH₃-added Ar plasma; electron traps; isothermal capacitance transient spectroscopy; phosphine plasma; plasma-induced defect suppression; Argon; Electron traps; Indium gallium arsenide; Optical surface waves; Plasma applications; Plasma chemistry; Plasma density; Plasma measurements; Spectroscopy; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712429

Filename

712429