• DocumentCode
    2817735
  • Title

    Highly-selective dry etching of InAlAs over InGaAs assisted by ArF excimer laser

  • Author

    Takazawa, Hiroyuki ; Takatani, Shinichiro

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    Highly selective etching of InAlAs over InGaAs by ArF excimer laser with Cl2 gas was demonstrated. The etching rate of InAlAs relative to that of InGaAs increased as the laser fluence decreased and the Cl2 pressure increased, and the highest observed etching rate ratio exceeded 70. The very fast InAlAs etching rate is speculated to be due to the higher reactivity of Al than that of Ga
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beam etching; photochemistry; plasma chemistry; reaction rate constants; semiconductor heterojunctions; sputter etching; surface chemistry; ArF; ArF excimer laser; Cl2; Cl2 gas; Cl2 pressure; InAlAs; InAlAs-InGaAs; InGaAs; etching rate; etching rate ratio; highly-selective dry etching; laser fluence; reactivity; Dry etching; Gallium arsenide; Gas lasers; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Plasma applications; Plasma devices; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712432
  • Filename
    712432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817735