Ultrafast all-optical switching at 1.3 μm/1.55 μm using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

Author

Yoskida, H. ; Mozume, T. ; Neogi, A. ; Wada, O.

Author_Institution

FESTA Lab., Femtosecond. Technol. Res. Assoc., Ibaraki, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

247

Lastpage

249

Abstract

A coupled double quantum well (C-DQW) structure enabling ultrafast, multi-wavelength, all-optical modulation using intersubband transitions is proposed. It has been shown from the calculation of absorption spectrum and relaxation characteristics that the InGaAs/AlAsSb C-DQW structure is desirable for applications in all-optical switches for multi-wavelength operation at near-infrared wavelengths down to 1.3 μm. The capability of ultrafast all-optical switching/wavelength conversion between 1.3 μm and 1.55 μm has also been shown

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; optical switches; optical wavelength conversion; semiconductor quantum wells; visible spectra; 1.3 mum; 1.55 mum; InGaAs-AlAsSb; absorption spectrum; coupled double quantum well; intersubband transitions; multi-wavelength operation; near-infrared wavelengths; relaxation characteristics; ultrafast all-optical switching; wavelength conversion; Absorption; Communication switching; Energy states; Indium gallium arsenide; Indium phosphide; Laboratories; Optical coupling; Optical modulation; Optical wavelength conversion; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712448

Filename

712448