DocumentCode
2818207
Title
Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD
Author
Heinzl, R. ; Grasser, T.
Author_Institution
Christian Doppler Laboratory for TCAD in Microelectronics at the Institute for Microelectronics, TU Vienna, Gußhausstraße 27-29, A-1040 Vienna, Austria. Phone: +43-1-58801/36053, Fax: +43-1-58801/36099, E-mail: heinzl@iue.tuwien.ac.at
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
211
Lastpage
214
Abstract
To overcome the difficulties in three-dimensional mesh generation for TCAD the advancing front Delaunay mesh generation method [1] was generalized by means of a set of meshing rules. A solid modeling language based on the needs of modern TCAD applications, and a mesh optimization based on a fuzzy classification scheme for the degree of degeneracy of elements have been developed and are ready for use. The applicability and results obtained from our generalized comprehensive approach are presented.
Keywords
Electronic mail; Ion implantation; Laboratories; Mesh generation; Microelectronics; Power generation; Robustness; Solid modeling; Surface topography; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201510
Filename
1562062
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