Surface-grating Bragg reflector lasers using deeply etched groove formed by reactive beam etching

Author

Oku, Satoshi ; Kondo, Susumu ; Noguchi, Yoshio ; Hirono, Takushi ; Nakao, Masashi ; Tamamura, Toshiaki

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

299

Lastpage

302

Abstract

Surface-grating InGaAlAs MQW distributed Bragg reflector (DBR) lasers were fabricated in a single-growth step. Deep-grating grooves in the 1.15-μm thick clad layer were formed by Br₂-N₂ reactive beam etching. The reflectivity and the coupling coefficient of a 35-μm-long DBR mirror provided by XOO-nm-deep grooves were evaluated to be about 0.3 and 230 cm^-1-400 cm ^-1. Between 15 and 55°C, the measured temperature dependence of the lasing wavelength is about 0.1 nm/°C which is one-fifth the dependence of a Fabry-Perot type laser

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; quantum well lasers; reflectivity; semiconductor epitaxial layers; 15 to 55 degC; DBR mirror; InGaAlAs; MQW lasers; coupling coefficient; deeply etched groove; lasing wavelength; reactive beam etching; reflectivity; surface-grating Bragg reflector lasers; temperature dependence; Distributed Bragg reflectors; Etching; Laser beams; Mirrors; Quantum well devices; Reflectivity; Surface emitting lasers; Temperature dependence; Temperature measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712462

Filename

712462