DocumentCode
2818326
Title
Doping Profile Effects on Device Characteristics of Nano-Scale MOSFETs
Author
Takeda, Hiroshi ; Mori, Nobuya
Author_Institution
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita City, Osaka 565-0871, Japan. Tel: +81-6-6879-7767, Fax: +81-6-6879-7753. E-mail: takeda@ele.eng.osaka-u.ac.jp
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
247
Lastpage
250
Abstract
We have numerically simulated device characteristics of sub-10 nm gate length bulk n-MOSFETs with various doping profiles, using a quantum transport simulator based on a non-equilibrium Green´s function method. Comparing the simulated results, we study effects of the doping profile on the device characteristics. The simulation study reveals that the off-set doping profiles in the source/drain regions play an important role in controlling the direct source-to-drain tunneling current.
Keywords
Boundary conditions; Degradation; Doping profiles; Green´s function methods; MOSFET circuits; Nanoscale devices; Poisson equations; Quantum mechanics; Reservoirs; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201519
Filename
1562071
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