First multi-mode interference devices fabricated by metal-organic vapor phase diffusion enhanced selective area epitaxy

Author

Bouda, M. ; Kaida, N. ; Mishima, Y. ; Nakano, Y. ; Shimogaki, Y. ; Tada, K.

Author_Institution

Sch. of Eng., Tokyo Univ., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

329

Lastpage

332

Abstract

For the first time multi-mode interference (MMI) power splitters have been fabricated by selective area growth, using our novel metal-organic vapor phase diffusion enhanced selective area epitaxy (MOVE²) process which features extremely wide-range in-plane bandgap control and high design flexibility and therefore is very suitable for photonic integration. Excess losses as low as 2 dB have been obtained for MMI power splitters with smooth and sufficiently flat waveguide structures including S-bends

Keywords

III-V semiconductors; MOCVD; indium compounds; light interference; optical beam splitters; optical losses; optical planar waveguides; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 2 dB; InP; MMI power splitters; MOVE²; S-bends; excess losses; high design flexibility; metal-organic vapor phase diffusion enhanced selective area epitaxy; multi-mode interference devices; photonic integration; power splitters; smooth flat waveguide structures; wide-range in-plane bandgap control; Absorption; Dielectric substrates; Epitaxial growth; Fabrication; Indium gallium arsenide; Indium phosphide; Interference; Optical losses; Photonic band gap; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712469

Filename

712469