• DocumentCode
    281921
  • Title

    Noise in submicron MOSFETs-a tool for characterising the Si-SiO2 interface

  • Author

    Uren, M.J. ; Kirton, M.J. ; Collins, S.

  • Author_Institution
    R. Signals & Radar Estab., Great Malvern, UK
  • fYear
    1989
  • fDate
    32637
  • Firstpage
    42552
  • Lastpage
    42554
  • Abstract
    In submicron MOSFETs, a discrete switching in the drain current can be seen as electrons are captured and emitted from a single Si-SiO 2 interface state. In larger devices where a large number of defects are active, this results in 1/f noise in the device resistance. This paper is concerned with why the properties of those defects result in a spectrum of 1/f form and the relationship between noise measurements of interface states and the more conventional technique of CV testing
  • Keywords
    electron device noise; elemental semiconductors; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; silicon compounds; 1/f noise; CV testing; Si-SiO2 interface state; device resistance; discrete switching; drain current; noise measurements; submicron MOSFETs;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Sub-Micron Silicon Engineering, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    198412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=281921