A 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier Module

Author

Krishnamurthy, K. ; Lieu, D. ; Vetury, R. ; Martin, J.

Author_Institution

High Power Product Line, RFMD, Charlotte, NC, USA

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

We have demonstrated a 0.1-1.8 GHz, 100 W GaN HEMT power amplifier module with 11 dB gain, 94-142 W CW output power and 40.6-74.0% drain efficiency over the band. The power amplifier module uses broadband low loss coaxial baluns to combine four 30 W broadband lossy matched GaN HEMT PAs on a 2 × 2 inch compact PCB. The individual PAs are fully matched to 50 Ohms and obtains 23.6-30.9 W with 44.5-63.7 % drain efficiency over the band. The packaged amplifiers contain a GaN on SiC device operating at 50 V drain voltage with a GaAs integrated passive matching circuitry. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.

Keywords

III-V semiconductors; UHF power amplifiers; baluns; gallium compounds; high electron mobility transistors; passive networks; wideband amplifiers; GaN; HEMT power amplifier module; broadband amplifier; broadband lossy matched HEMT PA; broadband low loss coaxial balun; compact PCB; drain efficiency; efficiency 40.6 percent to 74.0 percent; frequency 0.1 GHz to 1.8 GHz; gain 11 dB; passive matching circuitry; power 23.6 W to 30.9 W; power 30 W; power 94 W to 142 W; resistance 50 ohm; Broadband amplifiers; Gallium nitride; HEMTs; Impedance matching; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619612

Filename

5619612